Figure 5From: Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperaturesDoppler broadening spectroscopy of S - W parameters vs. positron incident energy. (a) S and (b) W parameters vs. positron incident energy for samples annealed at different temperatures for 10 min. (c) S-W plot for samples annealed at different temperatures for 10 min.Back to article page