Figure 1From: Ultradense and planarized antireflective vertical silicon nanowire array using a bottom-up techniqueControlling the geometry of the AAO template. (a) Periodicity of the nanopore array can be adjusted by varying the anodization voltage and the acid used. (b) Diameter of the nanopores is controlled by a chemical etching in phosphoric acid (7 wt.%, 30°C), the plot is for a 40-V alumina.Back to article page