Figure 3From: Ultradense and planarized antireflective vertical silicon nanowire array using a bottom-up techniqueX-ray diffraction. Grazing incidence X-ray diffraction of a silicon nanowire array grown on a Si (100) substrate near the (−440) reflection of the substrate. The fit of the diffraction pattern reveals satellites of the nanowires’ peak (labeled S−2, S−1, S1, and S2) due to the good diameter homogeneity of the array.Back to article page