Figure 2From: SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithographySML contrast curves generated using 30 keV on 300- to 330-nm-thick resist. The development was performed for 20 s in MIBK (squares), n-amyl acetate (triangles), IPA/water (7:3) (crosses), xylene (stars), xylene/methanol (3:1) (circles), and MIBK/IPA (1:3) (diamonds).Back to article page