Figure 3From: SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithographyComparison of SML and PMMA contrast curves. Both SML (triangles) and PMMA (circles) were exposed at 30 keV and developed for 20 s in MIBK/IPA (1:3) (filled symbols) and IPA/water (7:3) (open symbols).Back to article page