Figure 5From: SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithographyMicrographs of 70-nm-pitch gratings patterned by 30 keV on 300- to 330-nm-thick SML. Effect of dose on increasing line width (a) 550 pC/cm, 25-nm gap, (b) 750 pC/cm, 32-nm gap, and (c) 950 pC/cm, 40-nm gap. Data obtained for 20 s ultrasonic development in IPA/water (7:3) and 2 s pentane rinse.Back to article page