Figure 6From: Lithography-free fabrication of silicon nanowire and nanohole arrays by metal-assisted chemical etchingSEM images of Ag film. (a) A 12-nm Ag film annealed at 200°C for 10 min, (b) planar view of corresponding etching results to (a), (c) 14-nm-thick Ag film annealed at 250°C for 10 min, and (d) planar view of corresponding etching results to (c). All the scale bars of the insets are 500 nm. (e, f) The statistical distribution for the average hole diameters for (b) and (d), respectively.Back to article page