Figure 2From: Grain size dependence of dielectric relaxation in cerium oxide as high-k layerXRD patterns for the 250° C samples (green for the as-deposited and blue for the post-deposition annealing). The grain size of the annealed sample (9.55 nm) increased compared to the as-deposited sample (8.83 nm), which suggests that post-deposition annealing in vacuum causes an increase in the size of the crystalline grains.Back to article page