Figure 4From: The ion implantation-induced properties of one-dimensional nanomaterialsFESEM images of bubbles formed at 50-keV Ga+implantation on GaN nanowires. The fluence was 2 × 1020 ions/m2. Inset shows a large bubble with a diameter of approximately 200 nm. Reprinted with permission from Dhara et al. [27].Back to article page