Figure 4From: Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistorsTransfer and output characteristics. Transfer characteristics (IDS-VGS) (a) and output characteristics (IDS-VDS) (b) of high-κ Er2O3 and Er2TiO5 a-IGZO TFT devices.Back to article page