Figure 5From: Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistorsThreshold voltage and drive current degradation and structural model. (a) Threshold voltage shift and current drive degradation as a function of stress time for high-κ Er2O3 and Er2TiO5 a-IGZO TFT devices. Structural model of the (b) Er2O3 surface and (c) Er2TiO5 surface.Back to article page