Figure 2
STEM and EDX images of 50-nm Ge QDs formed after thermal oxidation of Si 0.85 Ge 0.15 pillars. Si0.85Ge0.15 pillars with a diameter of 100 nm were thermally oxidized at 900°C for (a) 60 and (b) 90 min.
Figure 2 | Nanoscale Research Letters
