Figure 2From: Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of siliconSEM image and diameter distribution of the patterned silicon surface and the Au mesh. (a) SEM image and (c) diameter distribution of the patterned silicon surface after the removal of the AAO mask and SiO2 layer. (b) SEM image and (d) diameter distribution of the Au mesh after the deposition of the Au film on the patterned silicon surface. The bars in (c) and (d) represent the measured statistical data, and the line is a Gaussian fitting.Back to article page