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Figure 5 | Nanoscale Research Letters

Figure 5

From: Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of silicon

Figure 5

SEM images of the SiNW arrays catalyzed using the Au mesh with different thickness. Cross-sectional (a, b, c) and the corresponding plan-view (d, e, f) SEM images of the vertically aligned SiNW arrays catalyzed using the Au mesh with thicknesses of 15, 30, and 45 nm, respectively, for 10 min at 22°C. For the SEM observation, the samples were tilted by 15°.

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