TY - JOUR AU - Dupuis, J. AU - Fourmond, E. AU - Lelievre, J. F. AU - Ballutaud, D. AU - Lemiti, M. PY - 2008 DA - 2008// TI - Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation JO - Thin Solid Films VL - 516 UR - https://doi.org/10.1016/j.tsf.2007.12.026 DO - 10.1016/j.tsf.2007.12.026 ID - Dupuis2008 ER - TY - JOUR AU - Seiffe, J. AU - Gautero, L. AU - Hofmann, M. AU - Rentsch, J. AU - Preu, R. AU - Weber, S. AU - Eichel, R. A. PY - 2011 DA - 2011// TI - Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride JO - J Appl Phys VL - 109 UR - https://doi.org/10.1063/1.3544421 DO - 10.1063/1.3544421 ID - Seiffe2011 ER - TY - JOUR AU - Hallam, B. AU - Tjahjono, B. AU - Wenham, S. PY - 2012 DA - 2012// TI - Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers JO - Sol Energy Mater Sol Cells VL - 96 UR - https://doi.org/10.1016/j.solmat.2011.09.052 DO - 10.1016/j.solmat.2011.09.052 ID - Hallam2012 ER - TY - JOUR AU - Gusev, E. P. AU - Lu, H. C. AU - Gustafsson, T. AU - Garfunkel, E. AU - Green, M. L. AU - Brasen, D. PY - 1997 DA - 1997// TI - The composition of ultrathin silicon oxynitrides thermally grown in nitric oxide JO - J Appl Phys VL - 82 UR - https://doi.org/10.1063/1.365858 DO - 10.1063/1.365858 ID - Gusev1997 ER - TY - JOUR AU - Lu, H. C. AU - Gusev, E. AU - Yasuda, N. AU - Green, M. AU - Alers, G. AU - Garfunkel, E. AU - Gustafsson, T. PY - 2000 DA - 2000// TI - The growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon JO - Appl Surf Sci VL - 166 UR - https://doi.org/10.1016/S0169-4332(00)00475-X DO - 10.1016/S0169-4332(00)00475-X ID - Lu2000 ER - TY - JOUR AU - Hori, T. AU - Yasui, T. AU - Akamatsu, S. PY - 1992 DA - 1992// TI - Hot-carrier effects in MOSFET’s with nitrided-oxide gate-dielectrics prepared by rapid thermal processing JO - IEEE Trans Electron Dev VL - 39 UR - https://doi.org/10.1109/16.108222 DO - 10.1109/16.108222 ID - Hori1992 ER - TY - JOUR AU - Yao, Z. Q. AU - Harrison, H. B. AU - Dimitrijev, S. AU - Yeow, Y. T. PY - 1995 DA - 1995// TI - Effects of nitric oxide annealing on thermally grown silicon dioxide characteristics JO - IEEE Trans Electron Dev VL - 16 UR - https://doi.org/10.1109/55.400733 DO - 10.1109/55.400733 ID - Yao1995 ER - TY - JOUR AU - Yu, Z. AU - Aceves, M. AU - Carrillo, J. AU - López-Estopier, R. PY - 2006 DA - 2006// TI - Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride JO - Thin Solid Films VL - 515 UR - https://doi.org/10.1016/j.tsf.2006.04.009 DO - 10.1016/j.tsf.2006.04.009 ID - Yu2006 ER - TY - JOUR AU - Criado, D. AU - Zúñiga, A. AU - Pereyra, I. PY - 2008 DA - 2008// TI - Structural and morphological studies on SiOxNy thin films JO - J Non-Crystalline Solids VL - 354 UR - https://doi.org/10.1016/j.jnoncrysol.2007.09.063 DO - 10.1016/j.jnoncrysol.2007.09.063 ID - Criado2008 ER - TY - JOUR AU - Albertin, K. F. AU - Pereyra, I. PY - 2008 DA - 2008// TI - Improved effective charge density in MOS capacitors with PECVD SiOxNy dielectric layer obtained at low RF power JO - J Non-Crystalline Solids VL - 354 UR - https://doi.org/10.1016/j.jnoncrysol.2007.08.093 DO - 10.1016/j.jnoncrysol.2007.08.093 ID - Albertin2008 ER - TY - JOUR AU - Green, M. L. AU - Gusev, E. P. AU - Degraeve, R. AU - Garfunkel, E. L. PY - 2001 DA - 2001// TI - Ultrathin (<4 nm) SiO2and Si–O–N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electrical limits JO - J Appl Phys VL - 90 UR - https://doi.org/10.1063/1.1385803 DO - 10.1063/1.1385803 ID - Green2001 ER - TY - JOUR AU - Pereyra, I. AU - Alayo, M. I. PY - 1997 DA - 1997// TI - High quality low temperature DPECVD silicon dioxide JO - J Non-Crys Solids VL - 212 UR - https://doi.org/10.1016/S0022-3093(96)00650-3 DO - 10.1016/S0022-3093(96)00650-3 ID - Pereyra1997 ER - TY - JOUR AU - Kraft, R. AU - Schneider, T. P. AU - Dostalik, W. W. AU - Hattangady, S. PY - 1997 DA - 1997// TI - Surface nitridation of silicon dioxide with a high density nitrogen plasma JO - J Vac Sci Technol B VL - 15 UR - https://doi.org/10.1116/1.589516 DO - 10.1116/1.589516 ID - Kraft1997 ER - TY - JOUR AU - Murakawa, S. AU - Ishizuka, S. AU - Nakanishi, T. AU - Suwa, T. AU - Teramoto, A. AU - Sugawa, S. AU - Hattori, T. AU - Ohmi, T. PY - 2010 DA - 2010// TI - Depth profile of nitrogen atoms in silicon oxynitride films formed by low-electron-temperature microwave plasma nitridation JO - Jpn J Appl Phys VL - 49 UR - https://doi.org/10.1143/JJAP.49.091301 DO - 10.1143/JJAP.49.091301 ID - Murakawa2010 ER - TY - JOUR AU - Perera, R. AU - Ikeda, A. AU - Hattori, R. AU - Kuroki, Y. PY - 2003 DA - 2003// TI - Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma JO - Thin Solid Films VL - 423 UR - https://doi.org/10.1016/S0040-6090(02)01044-1 DO - 10.1016/S0040-6090(02)01044-1 ID - Perera2003 ER - TY - JOUR AU - Kakiuchi, H. AU - Ohmi, H. AU - Harada, M. AU - Watanabe, H. AU - Yasutake, K. PY - 2007 DA - 2007// TI - Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma JO - Appl Phys Lett VL - 90 UR - https://doi.org/10.1063/1.2710190 DO - 10.1063/1.2710190 ID - Kakiuchi2007 ER - TY - JOUR AU - Kakiuchi, H. AU - Ohmi, H. AU - Harada, M. AU - Watanabe, H. AU - Yasutake, K. PY - 2007 DA - 2007// TI - Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar/O2plasma JO - Appl Phys Lett VL - 90 UR - https://doi.org/10.1063/1.2721366 DO - 10.1063/1.2721366 ID - Kakiuchi2007 ER - TY - JOUR AU - Zhuo, Z. AU - Sannomiya, Y. AU - Goto, K. AU - Yamada, T. AU - Ohmi, H. AU - Kakiuchi, H. AU - Yasutake, K. PY - 2012 DA - 2012// TI - Formation of SiO2/Si structure with low interface state density by atmospheric-pressure VHF plasma oxidation JO - Curr Appl Phys VL - 12 UR - https://doi.org/10.1016/j.cap.2012.04.015 DO - 10.1016/j.cap.2012.04.015 ID - Zhuo2012 ER - TY - JOUR AU - Ohmi, T. PY - 1996 DA - 1996// TI - Total room temperature wet cleaning for Si substrate surface JO - J Electrochem Soc VL - 143 UR - https://doi.org/10.1149/1.1837133 DO - 10.1149/1.1837133 ID - Ohmi1996 ER - TY - JOUR AU - Taniguchi, K. AU - Tanaka, M. AU - Hamaguchi, C. AU - Imai, K. PY - 1990 DA - 1990// TI - Density relaxation of silicon dioxide on (100) silicon during thermal annealing JO - J Appl Phys VL - 67 UR - https://doi.org/10.1063/1.345563 DO - 10.1063/1.345563 ID - Taniguchi1990 ER - TY - JOUR AU - Tatsumura, K. AU - Watanabe, T. AU - Yamasaki, D. AU - Shimura, T. AU - Umeno, M. AU - Ohdomari, I. PY - 2003 DA - 2003// TI - Effects of thermal history on residual order of thermally grown silicon dioxide JO - Jpn J Appl Phys VL - 42 UR - https://doi.org/10.1143/JJAP.42.7250 DO - 10.1143/JJAP.42.7250 ID - Tatsumura2003 ER - TY - JOUR AU - Gusev, E. P. AU - Lu, H. C. AU - Garfunkel, E. L. AU - Gustafsson, T. AU - Green, M. L. PY - 1999 DA - 1999// TI - Growth and characterization of ultrathin nitrided silicon oxide films JO - IBM J Res Dev VL - 43 UR - https://doi.org/10.1147/rd.433.0265 DO - 10.1147/rd.433.0265 ID - Gusev1999 ER - TY - JOUR AU - Watanabe, K. AU - Tatsumi, T. AU - Togo, M. AU - Mogami, T. PY - 2001 DA - 2001// TI - Dependence of electrical properties on nitrogen profile in ultrathin oxynitride gate dielectrics formed by using oxygen and nitrogen radicals JO - J Appl Phys VL - 90 UR - https://doi.org/10.1063/1.1402671 DO - 10.1063/1.1402671 ID - Watanabe2001 ER -