Figure 3From: Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridationXPS spectra in Si 2 p region for SiO x N y layer formed by 1% O 2 /He AP plasma oxidation-nitridation. The process is at 400°C for 9 min with a N2/O2 gas flow ratio of 0.1. (a) As-grown sample. (b) Annealed sample.Back to article page