Figure 5From: Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridationTypical HF C – V curves for Al/SiO x N y /Si capacitors utilizing SiO x N y layers prepared by different N 2 /O 2 flow ratios. The C–V curve shifts to a negative gate bias direction with increasing N2/O2 ratio.Back to article page