Figure 6From: Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridationHF and QS C - V curves for Al/SiO x N y /Si MOS capacitors (before annealing) utilizing SiO x N y layers. The layers were prepared under N2/O2 gas flow ratios of 0.01, 0.1, and 1.Back to article page