Table 1 Oxidation-nitridation conditions for Si wafer
Condition | Value |
|---|---|
Pressure (Torr) | 760 |
O2 concentration (%) | 1 |
He flow rate (slm) | 10 |
O2 flow rate (sccm) | 100 |
N2 flow rate (sccm) | 1,10, and 100 |
VHF (MHz) | 150 |
VHF power (W) | 1,000 to 1,500 |
Plasma gap (mm) | 0.8 to 1 |
Substrate temperature (°C) | 400 |
Oxidation-nitridation time (min) | 9 to 25 |