Figure 10From: Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin filmsLog( I )-log( V ) characteristics of NiO/TZO heterojunction diodes as function of deposition power of TZO thin films. (a) 100 W-deposited TZO, (b) 125 W-deposited TZO, and (c) 150 W-deposited TZO.Back to article page