Figure 2From: Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin filmsSurface SEM images of TZO and NiO thin films as a function of deposition power. TZO thin films were deposited at (a) 75 W, (b) 100 W, (c) 125 W, and (d) 150 W; (e) the NiO thin film deposited at 100 W.Back to article page