Figure 2From: GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applicationsRaman and PL characterizations of the GaAs-on-Si substrate. (a) Raman spectrum of the substrate with and without strain, (b) Raman shift of GaAs under different strains, (c) the PL spectrum of the substrate with and without strain, and (d) the PL shift of GaAs under different strains.Back to article page