Figure 3From: GR-FET application for high-frequency detection deviceSample resistance change due to temperature variation around room temperature. The left graph shows a metallic response from samples 3 and 4 (monolayer GR device). The right graph shows a semiconductor response from sample 2 (bilayer GR device). The two devices shown as insets are implemented using the mask patterns of Figure1a. They are identical except for the graphene thickness.Back to article page