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Figure 3 | Nanoscale Research Letters

Figure 3

From: Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing

Figure 3

Photos of LED surface. (a) An optical micrograph of an LED die with PQC structure on p-GaN surface and n-side roughing, (b) the tilted plane view SEM image between TCL and n-side roughing region (left-side inset 12-fold photonic quasi-crystal model), (c) p-GaN surface, and (d) n-side roughing of cross section SEM images with photonic quasi-crystal structure.

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