Figure 2From: Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystalsCurrent–voltage characteristics of Ge sample and plot of d (V) / d (ln J ) and H (J). I-V characteristics (curve 1) before and after irradiation (curve 2) by Nd:YAG laser at intensity I = 1.15 MW/cm2 and wavelength λ = 266 nm. (1, A) Plot of d(V) / d(ln J) and H(J) depending on current density J according to [21].Back to article page