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Figure 2 | Nanoscale Research Letters

Figure 2

From: Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate

Figure 2

Calculated intensity polar patterns of scattered light and measured polarized Raman scattering of TO phonon. (a) Calculated intensity polar patterns of the scattered light polarized perpendicular (I) or parallel (I) to the [111] direction as a function of the angle ϕ of the incident polarization with respect to [111] is shown for TO phonons in backscattering from a bulk InAs (110) substrate. (b) Measured polarized Raman scattering of the TO mode on a reference bulk InAs (110) substrate. Spheres and open squares represent the parallel and perpendicular components of the Raman signal, respectively. The continuous line is a squared sine fit to the data.

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