Figure 3From: Si-rich Al2O3 films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatmentThe XRD patterns of the samples submitted to CA and RTA treatments. XRD pattern for a sample with x = 0.68 after CA treatment at 1,150°C for 30 min in nitrogen flow. The inset shows the expanded presentation of the (111) Si peak for CA and RTA samples with x = 0.68. RTA treatment was performed at 1,050°C for 1 min in nitrogen flow.Back to article page