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Figure 3 | Nanoscale Research Letters

Figure 3

From: Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering

Figure 3

AFM topographic images obtained from silicon samples. (a) Pristine silicon and those exposed to 500 eV argon ions at an incidence angle of 70° to various fluences: (b) 1 × 1017, (c) 2 × 1017, (d) 5 × 1017, (e) 10 × 1017, (f) 15 × 1017, and (g) 20 × 1017 ions cm-2, respectively. The corresponding height scales for (a to g) are the following: 1, 4.3, 9.9, 39.5, 85.7, 60.9, and 182.2 nm. For clarity, (a to c) represent images acquired over a scan area of 1 × 1 μm2, whereas (d to g) are of scan area 2 × 2 μm2. Insets show the 2D autocorrelation functions for corresponding images.

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