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Figure 4 | Nanoscale Research Letters

Figure 4

From: Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering

Figure 4

AFM images of silicon exposed to 500 eV argon ions at 72.5° incidence angle. At fluences of (a) 1 × 1017, (b) 2 × 1017, (c) 5 × 1017, (d) 10 × 1017, (e) 15 × 1017, and (f) 20 × 1017 ions cm-2, respectively. The corresponding height scales for (a to f) are the following: 4, 3.6, 73.9, 85.9, 165.2, and 154.1 nm. For clarity, (a, b) have a scan size of 1 × 1 μm2, whereas (c to f) have a scan size of 2 × 2 μm2. Insets show the 2D autocorrelation functions for corresponding images.

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