Figure 3From: Single-crystalline δ-Ni2Si nanowires with excellent physical propertiesLow-magnification (a) and high-resolution TEM images (b) of δ-Ni 2 Si NWs grown at 400°C, 9 Torr, and 30-sccm Ar flow. The image shows that there exists an oxide layer with 2 nm in thickness on the NW. The inset in (b) shows the corresponding FFT diffraction pattern with a [1] zone axis and [010] growth direction.Back to article page