Figure 4From: Structural and optical characterization of pure Si-rich nitride thin filmsFTIR spectra of a SiN x thin film. The films were deposited by the N2-reactive method recorded with a normal incidence and with an incidence angle of 65°. The inset shows the TO and LO band positions of SiN x layers deposited by the N2-reactive (full squares) and the co-sputtering (empty squares) methods as a function of the composition.Back to article page