Figure 7From: Structural and optical characterization of pure Si-rich nitride thin filmsEvolution of the Raman spectra of SiN x with the refractive index and the annealing temperature. Effect of the annealing temperature on the Raman spectra of SiN x thin layers deposited on fused silica with a refractive index below 2.5 (a) and above (b). It independently concerns films produced by the N2-reactive (full symbols) and the co-sputtering (empty symbols) methods. The excitation power density was 0.46 MW/cm2.Back to article page