Figure 3
From: High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire
The photoresponse properties of middle-infrared photodetector based on InSb nanowire. (a) I-V curve of an InSb nanowire under irradiation of light with different intensities. (b) Dependence of photocurrent on light intensity and the fitted curve using the power law. (c) Dependence of responsivity on light intensity. (d) Dependence of quantum efficiency on light intensity and the fitted curve using the power law.