Figure 4From: High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowireThe photocurrent properties of middle-infrared photodetector based on InSb nanowire. (a) The photocurrent behaviors of the InSb nanowire illuminated under light intensity of 508 mW cm−2 as switch on and off states. (b) Ion/Ioff ratio under light different intensities. (c) Rise and (d) decay of time constant at different light intensities.Back to article page