Figure 1From: Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memorySchematic, TEM image, and equivalent circuit of twin poly-Si TFT EEPROM. (a) Schematic of the twin poly-Si TFT EEPROM cell with ten NWs. (b) The TEM image of Ω-gate NW twin poly-Si TFT EEPROM. The effective channel width is 113 nm × 10 [(61 nm + 16 nm × 2 + 10 nm × 2) × 10)]. (c) The equivalent circuit of twin poly-Si TFT EEPROM.Back to article page