Figure 1
From: InAs-mediated growth of vertical InSb nanowires on Si substrates
SEM images of InSb NWs grown on Si substrate. SEM image of the InSb NWs grown with (a) and without (b) InAs-seed-layer (tilt 45°); (c) side view of the InSb NWs showing a clear metallic droplet on their top. The inset (scale bar nm) shows the details on the final end of them (TEM); (d) the obtained InSb NWs without metallic droplet on the top. The inset shows details of this kind of NW (TEM).