Figure 4From: InAs-mediated growth of vertical InSb nanowires on Si substratesXRD and Raman spectroscopy of InSb NWs. (a) X-ray diffraction scan of a selected InSb NWs array sample, confirming the epitaxial relationship between InAs (111) and Si (111) substrate; (b) Raman spectroscopy measurements on InSb NWs grown on Si substrate.Back to article page