Figure 4
From: Temperature dependence of the electrical transport properties in few-layer graphene interconnects
Dimensionless resistance, R ( T )/ R (5 K ), versus electric field E at different temperatures for (a) tri- and (b) four-layer graphene. The resistance of graphene interconnects drops substantially as the electric field is increasing; the corresponding resistance drop is larger for low temperatures. Inset is an optical micrograph of the tri- and four-layer graphene with four Cr/Au contact electrodes, respectively.