Figure 2
From: A hot hole-programmed and low-temperature-formed SONOS flash memory

Cross-sectional TEM image of the sol–gel-derived Ti x Zr y Si z O film. The thickness of the Ti x Zr y Si z O film is calculated to be 2 nm after 600°C annealing.
From: A hot hole-programmed and low-temperature-formed SONOS flash memory
Cross-sectional TEM image of the sol–gel-derived Ti x Zr y Si z O film. The thickness of the Ti x Zr y Si z O film is calculated to be 2 nm after 600°C annealing.