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Figure 6 | Nanoscale Research Letters

Figure 6

From: A hot hole-programmed and low-temperature-formed SONOS flash memory

Figure 6

Poole-Frenkel current of the Ti x Zr y Si z O memory under negative gate bias. (a) Poole-Frenkel plot of the Ti x Zr y Si z O memory at different measuring temperatures. (b) Arrhenius plot of the memory at different values of electric field. (c) Graphical determination of the trap depth from the dependence of activation energy on the square root of electric field.

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