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Table 1 Comparison of P/E speed and data retention of the sol–gel-derived high- κ memory devices

From: A hot hole-programmed and low-temperature-formed SONOS flash memory

  This work (Ti x Zr y Si z O with 600°C annealing) Ti x Zr y Si z O NC with 900°C annealing[13] Zr x Hf y Si z O NC with 900°C annealing[6] HfSi x O y with 900°C annealing[21]
Program speed (2-V shift) 1.6 × 10−5 s 2.4 × 10−5 s 3 × 10−5 s 2 × 10−2 s
(Vg = −8 V, Vd = 8 V)
1.2 × 10−4 (Vg = −8 V, Vd = 8 V) (Vg = 10 V, Vd = 9 V) (Vg = Vd = 10 V)
(Vg = −6 V, Vd = 6 V)
Erase speed (2-V shift) 1.7 × 10−6 s 1.9 × 10−6 s 2 × 10−3 s 5 × 10−5 s
(Vg = Vd = 8 V)
5.2 × 10−6 s (Vg = Vd = 8 V) (Vg = −10 V, Vd = 9 V) (Vg = 10 V, Vd = 10 V)
(Vg = Vd = 6 V)
Retention at 85°C 5% loss 12% loss 11% loss 20% loss
(106 s) (106 s) (106 s) (only 104 s)
Retention at 125°C 10% loss 22% loss 30% loss NA
  (106 s) (106 s) (106 s)  
  1. NC nanocrystal.