A hot hole-programmed and low-temperature-formed SONOS flash memory

Table 1 Comparison of P/E speed and data retention of the sol–gel-derived high- κ memory devices

	This work (Ti_xZr_ySi_zO with 600°C annealing)	Ti_xZr_ySi_zO NC with 900°C annealing[13]	Zr_xHf_ySi_zO NC with 900°C annealing[6]	HfSi_xO_ywith 900°C annealing[21]
Program speed (2-V shift)	1.6 × 10⁻⁵ s	2.4 × 10⁻⁵ s	3 × 10⁻⁵ s	2 × 10⁻² s
	(V_g = −8 V, V_d = 8 V)	2.4 × 10⁻⁵ s	3 × 10⁻⁵ s	2 × 10⁻² s
	1.2 × 10⁻⁴	(V_g = −8 V, V_d = 8 V)	(V_g = 10 V, V_d = 9 V)	(V_g = V_d = 10 V)
	(V_g = −6 V, V_d = 6 V)	(V_g = −8 V, V_d = 8 V)	(V_g = 10 V, V_d = 9 V)	(V_g = V_d = 10 V)
Erase speed (2-V shift)	1.7 × 10⁻⁶ s	1.9 × 10⁻⁶ s	2 × 10⁻³ s	5 × 10⁻⁵ s
	(V_g = V_d = 8 V)	1.9 × 10⁻⁶ s	2 × 10⁻³ s	5 × 10⁻⁵ s
	5.2 × 10⁻⁶ s	(V_g = V_d = 8 V)	(V_g = −10 V, V_d = 9 V)	(V_g = ⁻10 V, V_d = 10 V)
	(V_g = V_d = 6 V)	(V_g = V_d = 8 V)	(V_g = −10 V, V_d = 9 V)	(V_g = ⁻10 V, V_d = 10 V)
Retention at 85°C	5% loss	12% loss	11% loss	20% loss
Retention at 85°C	(10⁶ s)	(10⁶ s)	(10⁶ s)	(only 10⁴ s)
Retention at 125°C	10% loss	22% loss	30% loss	NA
	(10⁶ s)	(10⁶ s)	(10⁶ s)