Figure 5From: Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithographyCross-sectional TEM images for the etched SiGe/Si MQW samples. The samples were etched for (a) 200 s, (b) 300 s and (c) 500 s, respectively. The right column of (b) also provides the high-magnification view for the upper and lower SiGe layers within a SiGe/Si MQW nanorod, respectively.Back to article page