Figure 3From: Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical depositionRS properties of the Au/Co 3 O 4 /ITO memory cells. (a) Typical bipolar resistance switching I-V curves of the Au/Co3O4/ITO cells. (b) Electrical pulse-induced resistance switching of the Au/Co3O4/ITO memory cell at room temperature for 60 s, (inset, data retention of Au/Co3O4/ITO memory cell for >104 s), and (c) I-V curves on log scale.Back to article page