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Figure 10 | Nanoscale Research Letters

Figure 10

From: Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

Figure 10

I-V switching characteristics and multilevel operation of a cross-point device. (a) This cross-point device was switchable from CC of 10 to 200 μA at 85°C. Two cycles of each level in linear scale are shown. (b) LRS decreases with increasing CC from 10 to 200 μA, whereas HRS remains unchanged. This RRAM device was measured using an interfacing auto program between HP 4156C and a computer. (c) I-V characteristics measured at 85°C replotted in semi-log scale. (d) One hundred repeatable switching cycles were observed with CC of 10, 50, 100, and 200 μA.

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