Figure 11From: Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materialsStability and data retention of a cross-point device. (a) Long read pulse endurance of >105 cycles and (b) data retention of >104 s are observed with CCs of 50, 100, and 200 μA. Good data retention is also observed at 85°C at a low CC of 50 μA. (c) Program/erase endurance of memory device.Back to article page