Figure 3From: Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materialsMorphology and composition of an IrO x /AlO x /W cross-point structure. (a) OM image. (b) Cross-sectional TEM image of the cross-point memory device. The thickness of AlOx film is approximately 7 nm. (c) EDS obtained from TEM image (b).Back to article page