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Figure 5 | Nanoscale Research Letters

Figure 5

From: Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

Figure 5

Current–voltage ( I-V ) switching characteristics of devices with via-hole structure under negative (NF) and positive formation (PF). (a, c, e, and g) Switching curves of NF devices containing AlOx, GdOx, HfOx, and TaOx switching materials, respectively, in an IrOx/high-κx/W structure. (b, d, f, and h) PF devices containing AlOx, GdOx, HfOx, and TaOx switching materials, respectively, in an IrOx/high-κx/W structure.

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