Figure 9From: Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materialsOne thousand consecutive dc switching cycles of IrO x /AlO x /W cross-point memory. The switching was obtained at a CC of 200 μA and a low operation voltage of ±2 V for the PF device with a size of 4 × 4 μm.Back to article page