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Figure 7 | Nanoscale Research Letters

Figure 7

From: Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements

Figure 7

Temperature dependence of Hall coefficient and carrier mobility. (a) Temperature dependence of the measured Hall coefficient for the 4-μm-diameter bismuth microwire and the expected values for bulk bismuth in two directions. (b) Temperature dependence of carrier mobility evaluated from the Hall coefficient and the expected values of bulk bismuth for the binary-bisectrix direction.

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