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Table 1 Intensity of the silicon suboxides for the samples annealed at 150°C and 400°C

From: Kinetic study of H-terminated silicon nanowires oxidation in very first stages

  T = 150°C T = 400°C
Intensity/oxidation time (min) 5 10 20 30 60 5 10 20 30 60
Si2O 0.317 0.269 0.252 0.289 0.198 0.235 0.227 0.186 0.212 0.249
SiO 0.067 0.092 0.102 0.151 0.148 0.107 0.089 0.142 0.095 0.104
Si2O3 0.026 0.078 0.076 0.126 0.088 0.157 0.077 0.149 0.139 0.083
SiO2 0.228 0.350 0.414 0.666 0.787 1.181 1.390 1.569 1.604 1.922
Total 0.640 0.790 0.845 1.234 1.223 1.680 1.785 2.047 2.052 2.360